В США объяснили провал «Леопардов» на Украине02:03
Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
，这一点在Line官方版本下载中也有详细论述
Credit: Stan Schroeder / Mashable，详情可参考服务器推荐
dx = scale_lon * (lon1 - lon0)
这是一场极具诱惑力的商业推演，但现实的漩涡往往比推演沉重。